EcoSPARK짰2 300mJ, 400V, N-Channel Ignition IGBT

文件：664.59 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：FGD3040G2；Package：DPAK3；ECOSPARK 2 300 mJ, 400 V, N-Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications

文件：811.37 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：FGD3040G2；Package：DPAK；EcoSPARK 2 Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil on Plug Application

文件：723.28 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 41A 150W DPAK

ONSEMI

安森美半导体

EcoSPARK 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

文件：966.83 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT，400V，26A，1.35V，300mJ，DPAKEcoSPARK® II，N 沟道点火

用于汽车点火线圈驱动器电路和笔式点火线圈应用的 N 沟道点火 IGBT。 • SCIS 能量=300mJ（TJ = 25°C）\n• 逻辑电平栅极驱动\n• 符合 AEC Q101 标准\n• 符合RoHS标准;

ONSEMI

安森美半导体

IGBT， N 沟道点火，DPAK，26A，1.35V，300mJ EcoSPARK® II

N-channel ignition IGBT for automotive ignition coil driver circuits and coil on plug applications. • SCIS Energy = 300mJ at TJ = 25°C\n• Logic Level Gate Drive\n• Qualified to AEC Q101\n• RoHS Compliant;

ONSEMI

安森美半导体

包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：FGD3040G2-0002V

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 41A TO252AA

ONSEMI

安森美半导体