IGBT，600V，40A，场截止

飞兆半导体的场截止第二代 IGBT 新系列采用的是新颖的电场截止型 IGBT 技术，为低导通和开关损耗的焊接和 PFC 应用提供最优性能。 •最大结温TJ =175 °C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压：VCE(sat) =1.9V（典型值）@ IC =40A\n•快速开关：EOFF =6.5uJ/A\n•紧密的参数分布\n•符合 RoHS 标准\n•仅红外回流焊;

ONSEMI

安森美半导体

600V, 40A Field Stop IGBT

文件：850.83 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat

文件：683.15 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo

文件：806.08 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体