600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat

文件：683.15 Kbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：FGH40N60SFD；Package：TO-247；IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S

文件：815.57 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FGH40N60SFDTU；Package：TO-247；IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S

文件：815.57 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo

文件：806.08 Kbytes 页数：9 Pages

Fairchild

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

600 V, 40 A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo

文件：291.77 Kbytes 页数：9 Pages

Fairchild

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat

文件：683.15 Kbytes 页数：8 Pages

Fairchild

仙童半导体

IGBT，600V，40A，2.3V，TO-247 高速场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压： VCE(sat)=2.3 V @ IC=40A\n•高输入阻抗\n•快速开关： EOFF =8uJ/A\n•符合 RoHS 标准;

ONSEMI

安森美半导体

600 V、40 A、2.3 V、TO-247高速场截止 IGBT

飞兆半导体的场截止 IGBT 新系列采用新型场截止 IGBT 技术，为车用充电器、逆变器和其他低导通和开关损耗至关重要的应用提供了最佳性能。 • 高电流能力\n• 低饱和电压： VCE(sat) = 2.3 V，需 IC = 40 A\n• 高输入阻抗\n• 快速开关\n• 符合RoHS标准\n• 符合 AEC-Q101 汽车行业标准要求;

ONSEMI

安森美半导体