FFSP2065A

SiC 二极管，650V，20A，TO-220-2; • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSP2065A

丝印：FFSP2065A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 650 V, 20 A

FFSP2065A

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 25A TO220-2

FFSP2065B

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-220-2L

Features •MaxJunctionTemperature175°C •AvalancheRated94mJ •HighSurgeCurrentCapacity •PositiveTemperatureCoefficient •EaseofParalleling •NoReverseRecovery/NoForwardRecovery •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •

FFSPF2065A

SiCSchottkyBarrierDiode

FEATURES ·HighSurgeCurrentCapacity ·NoReverseRecovery/NoForwardRecovery ·EaseofParalleling ·NoReverseRecovery APPLICATIONS ·GeneralPurpose ·SMPS,SolarInverter,UPS ·PowerSwitchingCircuits

HIC2065

VoltageRepeater