SiC 二极管，650V，20A，TO-220-2

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

丝印：FFSP2065A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 650 V, 20 A

文件：294.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 25A TO220-2

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L

Features • Max Junction Temperature 175°C • Avalanche Rated 94 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications •

文件：269.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SiC Schottky Barrier Diode

FEATURES · High Surge Current Capacity · No Reverse Recovery/No Forward Recovery · Ease of Paralleling · No Reverse Recovery APPLICATIONS · General Purpose · SMPS, Solar Inverter, UPS · Power Switching Circuits

文件：426.58 Kbytes 页数：3 Pages

ISC

无锡固电

Voltage Repeater

文件：853.78 Kbytes 页数：5 Pages

PF

倍加福