Module Adapter Board for EconoDUAL™3 IGBT Modules

The MA200E12/17 module adapter board offers the following features: • Dual channel IGBT driver together with 2ED300E17-SFO (detailed description in AN2007-05) and 2ED300C17-S /-ST EiceDRIVER™ • Electrically and mechanically suitable for EconoDual™ 3 modules family • Operating temperature (desi

文件：1.1058 Mbytes 页数：25 Pages

Infineon

英飞凌

EconoDUAL™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features • Electrical features - VCES = 1700 V - IC nom = 300 A / ICRM = 600 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can b

文件：701.54 Kbytes 页数：17 Pages

Infineon

英飞凌

THINKI 40A,200V Matured Planar N-Channel Power MOSFETs

Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：1.29941 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

EasyDUAL module with CoolSiC™ Trench MOSFET and PressFIT / NTC

Features • Electrical features - VDSS = 1200 V - IDN = 25 A / IDRM = 50 A - Low inductive design - Low switching losses • Mechanical features - Rugged mounting due to integrated mounting clamps - PressFIT contact technology - Integrated NTC temperature sensor Potential applications •

文件：680.11 Kbytes 页数：16 Pages

Infineon

英飞凌

EasyDUAL module with CoolSiC™ Trench MOSFET and PressFIT / NTC / TIM

Features • Electrical features - VDSS = 1200 V - IDN = 25 A / IDRM = 50 A - Low inductive design - Low switching losses • Mechanical features - Rugged mounting due to integrated mounting clamps - PressFIT contact technology - Integrated NTC temperature sensor - Pre-applied thermal interf

文件：677.53 Kbytes 页数：16 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 1200 V - IDN = 280 A / IDRM = 560 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation

文件：600.51 Kbytes 页数：13 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 1200 V - IDN = 280 A / IDRM = 560 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：624.42 Kbytes 页数：13 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation

文件：533.75 Kbytes 页数：15 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - 4 kV AC 1 min insulation

文件：739.14 Kbytes 页数：15 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：715.46 Kbytes 页数：15 Pages

Infineon

英飞凌