62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：715.46 Kbytes 页数：15 Pages

INFINEON

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material Potential applications • UPS systems • DC/DC converter • High-frequency

文件：715.49 Kbytes 页数：15 Pages

INFINEON

英飞凌

CoolSiC ™ MOSFET半桥模块 2000 V

62 毫米 CoolSiC ™ MOSFET 半桥模块 2000 V、2.6 mΩ G1 采用著名的 62 毫米外壳，结合 M1H 芯片技术和预先应用的热界面材料 (TIM)。 • 高电流密度\n• 卓越的栅极氧化层可靠性\n• 坚固的集成体二极管\n• 高速开关模块\n• 标准构造技术;

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation

文件：533.75 Kbytes 页数：15 Pages

INFINEON

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - 4 kV AC 1 min insulation

文件：739.14 Kbytes 页数：15 Pages

INFINEON

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