FDZ206P数据手册ONSEMI中文资料规格书

描述 Description

General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low rDS(on).

特性 Features

• –13 A, –20 V.
   rDS(on) = 9.5 mW @ VGS = –4.5 V
   rDS(on) = 14.5 mW @ VGS = –2.5 V
• Occupies only 14 mm2 of PCB area.
   Only 42% of the area of SO-8
• Ultra-thin package: less than 0.80 mm height when mounted to PCB
• 0.65 mm ball pitch
• 3.5 x 4 mm2 footprint
• High power and current handling capabilityApplications
• Battery management
• Load switch
• Battery protection

应用 Application

• Battery management
• Load switch
• Battery protection