P-Channel 2.5V Specified PowerTrench

General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transf

文件：219.74 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 2.5V Specified PowerTrench® BGA MOSFET

General Description\nCombining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer • –13 A, –20 V.\n   rDS(on) = 9.5 mW @ VGS = –4.5 V\n   rDS(on) = 14.5 mW @ VGS = –2.5 V\n• Occupies only 14 mm2 of PCB area.\n   Only 42% of the area of SO-8\n• Ultra-thin package: less than 0.80 mm height when mounted to PCB\n• 0.65 mm ball pitch\n• 3.5 x 4 mm2 footprint\n• High power and curr;

ONSEMI

安森美半导体

SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)

文件：24.17 Kbytes 页数：2 Pages

RECTRON

丽正国际

Fast recovery type

Fast recovery type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame RetardantEpoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

文件：69.08 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

2A 800V Fast recovery diode

文件：370.163 Kbytes 页数：2 Pages

SUNMATE

森美特

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