FDT86244

SINGLE-CHIP DUAL PROSLIC®

Si32260/1Features TwocompleteFXSchannelsinasingle 6x8mmor8x8mmpackage PerformsallBORSCHTfunctions Idealforshort-orlong-loopapplications Ultralowpowerconsumption Internalbalancedorunbalancedringing Patentedlowpowerringing Adaptiveringing S

FDT86244

PROSLIC® SINGLE-CHIP FXS SOLUTION

Si3217x-CFeatures CompleteFXSsolutionin5x7mm PerformsallBORSCHTfunctions Idealforshorttomediumloops Globalprogrammability Internalbalancedorunbalanced ringing Patentedlowpowerringing Simplifiedconfigurationand diagnostics SupportedbyProSLICAPI

FDT86244

150V N沟道Power Trench® MOSFET

这一N沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为实现rDS(on)、开关性能以及坚固性而优化。; •VGS = 10 V且ID = 2.8A时，最大rDS(on) = 128 mΩ \n•VGS = 6 V且ID = 2.4A时，最大rDS(on) = 178 mΩ \n•高性能沟道技术可实现极低的rDS(on)\n•在广泛使用的表面贴装封装中可实现高功率和高电流处理能力\n•快速开关速度\n•100%经过UIL测试\n•符合RoHS标准\n;

FDT86244

N-Channel Enhancement MOSFET

FDT86244

N-Channel Power Trench MOSFET