FDT4N50NZU数据手册ONSEMI中文资料规格书

描述 Description

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode.

特性 Features

• Excellent body diode reverse recovery performance (lowest trr (Typ. 24 ns) & Qrr (Typ. 18 nC) with excellent softness)
• Lower switching loss in hard switching bridge circuit and better EMI
• Improved dv/dt capability
• Better system reliability in bridge circuit
• Low gate charge (Typ. 9.1 nC)
• Low switching loss
• Low Crss (Typ. 2.7 pF)
• Low switching loss
• ESD improved capability with internal zener diode between Gate and Source
• Better system reliability
• RDS(on) = 2.42Ω (Typ.) @ VGS = 10V, ID = 1 A
• RoHS compliant and Solder Pb-free
• 100% avalanche tested

应用 Application

• Consumer Power Supplies
• Industrial Power Supplies
• Lighting / Computing Power Supplies
• White Goods
• Pump
• LED lighting and ballast