双 P 沟道，Power Trench® MOSFET，30V，-2.9A，130mΩ

此P沟道MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对需要大范围栅极驱动电压额定值(4.5V – 25V)的电源管理应用进行了优化。 •-2.9 A, -30 V\n•RDS(on) = 130 mΩ@ VGS = -10 V\n•RDS(on) = 200 mΩ @ VGS = -4.5 V\n•低栅极电荷（2.5nC典型值）\n•快速开关速度\n•高性能沟道技术可实现极低 RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

Dual 30V P-Channel PowerTrench MOSFET

文件：73.89 Kbytes 页数：6 Pages

FAIRCHILD

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Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：107.4 Kbytes 页数：7 Pages

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HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：206.63 Kbytes 页数：7 Pages

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ULTRA LOW ON RESISTANCE

文件：212.12 Kbytes 页数：7 Pages

IRF