Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

互补，PowerTrench® MOSFET，20V

这些双N和P沟道增强模式功率场效应晶体管采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 • Q1： -6.5A、-20V\n• RDS(ON) = 43 mΩ @ VGS = 2.5 VQ2： -5A、-20V;

ONSEMI

安森美半导体

Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

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Microsemi

美高森美

High-Precision, Low-Voltage, Current-Sense Amplifier with Current Output and Chip Select for Multiplexing

General Description The MAX9934** high-precision, low-voltage, high-side current-sense amplifier is ideal for both bidirectional (charge/discharge) and unidirectional current measure ments in battery-powered portable and laptop devices. Input offset voltage (VOS) is a low 10µV (max) at +25°C ac

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Maxim

美信

Fully Assembled and Tested

文件：921.43 Kbytes 页数：6 Pages

Maxim

美信