丝印：FDPF8N50NZ；Package：TO-220F；N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m

Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100 Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Uninterruptible Power Supply • Lighting • AC-DC Power

文件：882.62 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.54 Kbytes 页数：2 Pages

ISC

无锡固电

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=7A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.67 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=6.5A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.87 Kbytes 页数：2 Pages

ISC

无锡固电

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET 500V, 7A, 1廓

文件：479.05 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel UniFET II MOSFET

文件：379.92 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，UniFETTM II，500 V，8 A，850 mΩ，TO-220F

UniFETTM II MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于先进平面条形和 DMOS 技术。 该先进 MOSFET 系列在平面 MOSFET 产品中具有最小的通态电阻，还可提供卓越的开关性能和更高的雪崩能量强度。 此外，内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 770mΩ （典型值）@ VGS = 10V, ID = 4A\n•低栅极电荷（典型值 14nC） \n•低 Crss（典型值 5pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力\n•改进了 ESD 防护能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体