FDP020N06B

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=313A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDP020N06B

N 沟道 PowerTrench® MOSFET 60V，313A，2mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。; •RDS(on) = 1.65mΩ （典型值）@ VGS = 10V, ID = 100A\n•低FOM RDS(on) *QG\n•低反向恢复电荷，Qrr = 194nC\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准\n;

FDP020N06B

New Products, Tips and Tools for Power and Mobile Applications

IIPP020N06N

iscN-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.0mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

IPI020N06N

NewOptiMOS??40Vand60V

IPI020N06N

OptiMOSTMPower-Transistor

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21