FDN352

P-Channel 30 V (D-S) MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

FDN352

P-Channel 30 V (D-S) MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

FDN352AP

Single P-Channel, PowerTrench

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■–1.3A,–30

FDN352AP

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

FDN352AP

丝印：52AP；Package：SOT-23；P-Channel 30 V (D-S) MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

FDN352AP

丝印：52AP；Package：SOT-23；P-Channel 30 V (D-S) MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

FDN352AP

单 P 沟道，PowerTrench® MOSFET，-30V，-1.3A，180mΩ; •-1.3A，-30V\n•RDS(ON) = 180 mΩ @ VGS = -10V\n•-1.1A，-30V\n•RDS(ON) = 300 mΩ @ VGS = -4.5V\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。\n;

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合需要在很小尺寸的表面贴装封装中实现低线内功率损耗的低电压和电池供电应用。

FDN352AP-HF

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

FDN352AP

Single P-Channel, PowerTrench MOSFET

FDN352AP_0508

Single P-Channel, PowerTrench MOSFET