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FDN352AP

Marking:52AP;Package:SOT-23;P-Channel 30 V (D-S) MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

FDN352AP

Marking:52AP;Package:SOT-23;P-Channel 30 V (D-S) MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

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