P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –

文件：144.58 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：306；P-Channel 1.8V Specified PowerTrench® MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –2.6 A, –12 V. RDS(ON) = 4

文件：247.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：306；Package：SOT-23；P-Channel 1.8 V (D-S) MOSFET

Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT

文件：468.58 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：306；Package：SOT-23；P-Channel 1.8 V (D-S) MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –2.6 A, –12 V. RDS(ON)

文件：342.58 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：306P；Package：SOT-23；Single P-Channel PowerTrench MOSFET

文件：1.00134 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

P-Channel 20-V (D-S) MOSFET

文件：1.039829 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

低压N沟道增强型场效应管

\n -12V P-Channel Enhancemen t ModeMOSFET\nFeatures\n• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V\nRDS(ON) = 50 mΩ @ VGS = –2.5 V\nRDS(ON) = 80 mΩ @ VGS = –1.8 V\n• Fast switching speed\nApplications\n• Battery management\n• Load switch\n• Battery protection

Puolop

迪浦

P 沟道，1.8V 指定，PowerTrench® MOSFET，-12V，-2.6A，40mΩ

此P沟道1.8V额定MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对电池的电源管理应用进行了优化。 •-2.6 A，-12 V\n•RDS(ON) = 40 mΩ @ VGS = -4.5 V\n•RDS(ON) = 50 mΩ @ VGS = -2.5 V\n•RDS(ON) = 80 mΩ @ VGS = -1.8 V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-3提供低RDS(ON)，并且在同样的尺寸下，功率处理能力比SOT23高出30%;

ONSEMI

安森美半导体

P-Channel MOSFET

XW

芯微半导体