30V N沟道PowerTrench® MOSFET

FDMS8880设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的rDS(on)。 •VGS = 10 V，ID = 13.5 A时，最大rDS(on) = 8.5 mΩ\n•VGS = 4.5 V，ID = 10.9 A时，最大rDS(on) = 13.0 mΩ\n•先进的封装和硅技术完美融合，实现了低rDS(on) 和高效率\n•MSL1耐用封装设计\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 30 V, 21 A, 8.5 m廓

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仙童半导体

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed. Features rDS

文件：259.38 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体