丝印：FDMS86181；Package：PQFN8；MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH

文件：482.04 Kbytes 页数：7 Pages

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安森美半导体

N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，124A，4.2mΩ

N 沟道 MV MOSFET 采用飞兆半导体的先进 PowerTrench® 工艺制造而成，该工艺集成了栅极屏蔽技术。 该工艺已经过优化，采用业界最佳的软体二极管最小化通态电阻，同时保持卓越的开关性能。 •屏蔽栅极 MOSFET 技术\n• 最大 rDS(on) = 4.2 mΩ（VGS = 10 V、ID = 44 A）\n• 最大 rDS(on) = 12 mΩ（VGS = 6 V、ID = 22 A）\n•ADD\n•Qrr 比其他 MOSFET 供应商低 50%\n•减少了开关噪音/EMI\n•MSL1 强健封装设计\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

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安森美半导体

N-Channel Enhancement MOSFET

Application | « Load switch | « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies |

文件：1.92398 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. •Shielded Gate MOSFET Technology\n• Optimized RDS* Qg Ratio\n• 50% lower Qrr than other MOSFET suppliers\n• Reduces Switching Spike (overshoot)\n•Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A\n•Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A\n•Lowers switching noise/EMI\n•MSL1 robust package design\;

ONSEMI

安森美半导体