N-Channel Power Trench짰 SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

文件：377.46 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N 沟道，Power Trench® SyncFET™，30V，20A，2.2mΩ

FDMC7660S设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的 rDS(on)。 该器件具有高效单片肖特基体二极管的新增优点。 • 最大值 rDS(on)=2.2 mΩ（需 VGS=10 V、ID=20 A\n• 最大值 rDS(on)=2.95 mΩ（需 VGS=4.5 V、ID=18 A\n•高性能技术可实现极低的 rDS(on)\n•终端无引线且符合RoHS标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 30 V, 2.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

文件：296.18 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 SyncFET 30 V, 42 A, 2.4 m廓

General Description The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

文件：483.34 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Switched-Capacitor Voltage Converter

文件：112.42 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司