P 沟道，Power Trench® MOSFET，-20V，-75A，4.9mΩ

This P−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. • Max rDS(on) = 4.9 m\u0002 at VGS = −4.5 V, ID = −18 A\n• Max rDS(on) = 16.4 m\u0002 at VGS = −1.8 V, ID = −9 A\n• High Performance Trench Technology for Extremely Low rDS(on)\n• High Power and Current Handling Capability in a Widely UsedSurface Mount Package\n• These Devices are Pb−Free, Halogen F;

ONSEMI

安森美半导体

丝印：FDMC4D9P20X8；Package：PQFN8；P?륝hannel Power Trench MOSFET

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ONSEMI

安森美半导体

Power-33-8

ON

上传：深圳市金嘉锐电子有限公司

DFN-8

FAIRCHILD/仙童

上传：深圳德田科技有限公司

QFN

FAIRCHILD/仙童

上传：深圳德田科技有限公司