丝印：FDMC3612；Package：WDFN8；MOSFET ??N-Channel, POWERTRENCH

文件：577.35 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel MOSFET

文件：2.42367 Mbytes 页数：6 Pages

KEXIN

科信电子

N-Channel Power Trench짰 MOSFET

文件：335.67 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：FDMC3612；Package：WDFN8；MOSFET ??N-Channel, POWERTRENCH

文件：577.35 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N 沟道，Power Trench® MOSFET，100V，12A，110mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性能而定制的。 •VGS = 10V，ID = 3.3 A时，最大rDS(on) = 110mΩ\n•VGS = 6 V，ID = 3.0 A时，最大rDS(on) = 122mΩ\n•薄型 - 最大1 mm，采用Power 33封装\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. •Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A\n• Low Conduction loss\n•Low Profile - 1 mm max in Power 33\n• Small Footprint\n•Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A\n•100% UIL Tested \n•RoHS Compliant;

ONSEMI

安森美半导体