N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. •Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A\n• Low Conduction loss\n•Low Profile - 1 mm max in Power 33\n• Small Footprint\n•Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A\n•100% UIL Tested \n•RoHS Compliant;

ONSEMI

安森美半导体

丝印：FDMC3612；Package：WDFN8；MOSFET ??N-Channel, POWERTRENCH

文件：577.35 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power-33-8

ON

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DFN-8

FAIRCHILD/仙童

上传：深圳德田科技有限公司

QFN

FAIRCHILD/仙童

上传：深圳德田科技有限公司