N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench® technology. This very high density process is especially tailored to minimize on state resistance and optimized for hot swap applications. • Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.5 A\n• Max rDS(on) = 41 mΩ at VGS = 6 V, ID = 5.0 A\n• Low Profile - 0.8 mm max in Power 33\n• 100% UIL Tested\n• RoHS Compliant;

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET

文件：386.93 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：N-CHANNEL POWERTRENCH MOSFET 100

ONSEMI

安森美半导体

QFN

ON/安森美

上传：深圳市创盛芯科技有限公司

Power-33-8

ON

上传：深圳市金嘉锐电子有限公司