N-Channel PowerTrench MOSFET

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Con

文件：214.83 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.8Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：344.7 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 75V、80A、3.8mΩ

N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ •RDS(on) = 3.5mΩ（典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 125nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体

TO-247

FSC

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SOD-80

ON

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