丝印：FDD9510L；Package：D-PAK；MOSFET - P-Channel Logic Level PowerTrench

文件：337.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -50A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：352.92 Kbytes 页数：2 Pages

ISC

无锡固电

P 沟道，PowerTrench® MOSFET，-40 V，-50 A，13.5 mΩ

P-Channel POWERTRENCH® MOSFET, -40 V, -50 A, 13.5 mΩ • Typical RDS(on) = 11 mΩ at VGS = -10V, ID = -50 A\n• Typical Qg(tot) = 28 nC at VGS = -10V, ID = -50 A\n•UIS Capability\n•RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体

RF AMPLIFIER MODEL

文件：80.87 Kbytes 页数：1 Pages

APITECH

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：408.22 Kbytes 页数：7 Pages

GTM

勤益投资控股

HERMETICALLY SEALED RELAY

文件：61.63 Kbytes 页数：3 Pages

HONGFA

宏发电声