N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：408.22 Kbytes 页数：7 Pages

GTM

勤益投资控股

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

HERMETICALLY SEALED RELAY

文件：61.63 Kbytes 页数：3 Pages

HONGFA

宏发电声

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

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IRF

3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

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