isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：330.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 80 V, ID= 95A RDS(ON)

文件：1.0335 Mbytes 页数：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench MOSFET

文件：1.06299 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDD86369；Package：D-PAK；Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ

Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Prim

文件：543.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ

此 N 沟道 MOSFET 是专为使用同步或传统开关 PWM 控制器来改进 DC/DC 转换器整体功效而设计的。 已针对低栅极电荷、低 rDS(on) 和高速开关进行了优化。 •典型值 rDS(ON) = 5.9mΩ （VGS = 10V、ID = 80A）\n•典型值 Qg(tot) = 34 nC（VGS = 10V、ID = 80A）\n•UIS 能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Automotive Engine Control

文件：462.62 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：310.17 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，PowerTrench® MOSFET，80 V，90 A，7.9 mΩ

N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ • Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A\n• Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体