500V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

文件：845.65 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 页数：9 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 900mΩ （最大值）@ VGS = 10V, ID = 3A\n•低栅极电荷（典型值 12.8nC） \n•低 Crss（典型值 9pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=5.5A@ TC=25℃ ·Drain Source Voltage : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.15Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：354.03 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：354.03 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：354.03 Kbytes 页数：9 Pages

Fairchild

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

文件：845.65 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

文件：845.65 Kbytes 页数：9 Pages

Fairchild

仙童半导体