N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：371.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：371.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.89214 Mbytes 页数：5 Pages

BYCHIP

百域芯

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：371.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=4.5A@ TC=25℃ ·Drain Source Voltage : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.35905 Mbytes 页数：5 Pages

BYCHIP

百域芯

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：995.86 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

功率 MOSFET，N 沟道，UniFETTM，200V，4.5A，800mΩ，DPAK

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 600mΩ （典型值）（VGS = 10V, ID = 2.3A 时）\n•低栅极电荷（典型值 4.7nC)\n•低 Crss（典型值 6.3pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

MOSFET N-CH 200V 4.5A D-PAK

ONSEMI

安森美半导体