N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：986.8 Kbytes 页数：4 Pages

Bychip

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a M

文件：107.47 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench SyncFET

General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a M

文件：107.47 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=64A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =59mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：352.15 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel PowerTrench SyncFET

General Description The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode u

文件：97.41 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：986.8 Kbytes 页数：4 Pages

Bychip

百域芯

30V N-Channel PowerTrench MOSFET

文件：110.7 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench MOSFET

文件：110.7 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极点和、低RDS(ON)、快速开关和超低RDS(ON)进行了优化，采用小型封装。 •66 A，30 V。\n•RDS(on) = 8 mΩ @ VGS = 10 V\n•RDS(on) = 10 mΩ @ VGS = 4.5 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体

30V N-Channel PowerTrench SyncFET

ONSEMI

安森美半导体