N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：226.16 Kbytes 页数：6 Pages

Fairchild

仙童半导体

N-Channel, Logic Level, PowerTrench™ MOSFET

ONSEMI

安森美半导体

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：226.16 Kbytes 页数：6 Pages

Fairchild

仙童半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：873.81 Kbytes 页数：4 Pages

Bychip

百域芯

30V N-Channel PowerTrench MOSFET

文件：122.79 Kbytes 页数：6 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，30V，30A，20mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极点和低RDS(ON)、快速开关和超低RDS(ON)进行了优化，采用小型封装。 •30 A，30 V。\n•RDS(on) = 20 mΩ @ VGS = 10 V\n•RDS(on) = 28 mΩ @ VGS = 4.5 V\n•低栅极电荷（典型值9 nC）。\n•快速开关\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体