FDD306P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28mΩ@VGS=–4.5VRDS(ON)=41mΩ@VGS=–2.5VRDS(ON)=90mΩ@VGS=–1.8V ■Fast

FDD306P

P-channel Enhancement Mode Power MOSFET

Features VDS=-30V,ID=-20A RDS(ON)

FDN306

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications •Batterymanagement •Loadswitch •Batteryprotection Features •–2.6A,–12V.RDS(ON)

FDN306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5VRDS(ON)=50mΩ@VGS=–2.5VRDS(ON)=80mΩ@VGS=–

FDN306P

SingleP-ChannelPowerTrenchMOSFET

FDN306P

P-Channel1.8V(D-S)MOSFET

Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5V RDS(ON)=50mΩ@VGS=–2.5V RDS(ON)=80mΩ@VGS=–1.8V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT

FDN306P

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications •Batterymanagement •Loadswitch •Batteryprotection Features •–2.6A,–12V.RDS(ON)

FDN306P-NL

P-Channel20-V(D-S)MOSFET

FFM306

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

FFM306

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features •Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Highcurrentcapability. •Fastswitchi