P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast

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Fairchild

仙童半导体

P-Channel 1.8V Specified PowerTrench

Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter Genera

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ONSEMI

安森美半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -20A RDS(ON)

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Bychip

百域芯

P 沟道 1.8V 指定 PowerTrench® MOSFET，-12V，-6.7A，28mΩ

此P沟道1.8V额定MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对电池功率管理应用进行了优化。 •-6.7A，-12V\n•RDS(ON) = 28 mΩ @ VGS = -4.5V\n•RDS(ON) = 41 mΩ @ VGS = -2.5V\n•RDS(ON) = 90 mΩ @ VGS = -1.8V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体