双 N 沟道 PowerTrench® MOSFET，逻辑电平，30V，2.5A，95mΩ

这些P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 此类器件非常适合所有需要小尺寸，特别是电池供电系统中需要低成本DC/DC转换的应用。 •2.5 A, 30 V\n•RDS(ON) = 0.095 Ω @ VGS = 10 V\n•RDS(ON) = 0.145 Ω @ VGS = 4.5 V\n•极快速开关\n•低栅极电荷（2.1nC，典型值）\n•SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）;

ONSEMI

安森美半导体

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：256.74 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

RF AMPLIFIER MODEL

文件：126.25 Kbytes 页数：1 Pages

APITECH

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

INTERSIL

Multi-Phase PWM Controller with Precision Rds(on) or DCR Differential Current Sensing for VR10.X Application

Multi-Phase PWM Controller with Precision rDS(ON)or DCR Differential Current Sensing for VR10.X Application The ISL6561 controls microprocessor core voltage regulation by driving up to 4 synchronous-rectified buck channels in parallel. Multi-phase buck converter architecture uses interlea

文件：782.11 Kbytes 页数：26 Pages

INTERSIL