256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

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256 x 4 CMOS RAM

Description\nThe HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.\n• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max\n• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max\n• Fast Access Time. . . . . . . . . . . . . .;

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256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil