60V P-Channel Logic Level PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V • Fast switching sp

文件：140.42 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

60V P-Channel Logic Level PowerTrench MOSFET

ONSEMI

安森美半导体

60V P-Channel Logic Level PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V • Fast switching sp

文件：140.42 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：696.79 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：564P；Package：SOT23-6；60V P-CHANNEL ENHANCEMENT MODE MOSFET

Application ●DC-DC Converters. ●Load Switch. ●Power Management.

文件：3.55055 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel 60 V (D-S) MOSFET

文件：1.65337 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

P 沟道，PowerTrench® MOSFET， 逻辑电平，60V，-3A，105mΩ

该60V P沟道MOSFET采用飞兆高压PowerTrench工艺制成。 已针对电源管理应用进行了优化。 •-3 A, -60 V\n•RDS(on) = 0.105 Ω @ VGS = -10 V\n•RDS(on) = 0.135 Ω @ VGS = -4.5 V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体