FDB8030L

N-Channel Logic Level PowerTrench MOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •80A,30V.RDS(ON)=0.0035Ω@VGS=10VRDS(ON)=0.0045Ω@VGS=4.5V

FDB8030L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDB8030L

N 沟道，PowerTrench® MOSFET，逻辑电平，30V，80A，4.5mΩ; • 80A, 30 V\n• RDS(ON) = 0.0035 Ω@ VGS =10 V\n• RDS(ON) = 0.0045 Ω@ VGS =4.5 V• 在高温下指定的临界DC电气参数• 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。• 高性能沟道技术可实现极低的RDS(ON)• 175°C最大结温额定值\n• Critical DC electrical parameters specified atelevated temperature\n• Rugged internal source-drain diode can eliminate theneed for an external Zener diode transientsuppressor\n• High performance trench technology for extremelylow RDS(ON)\n;

此N沟道逻辑电平MOSFET已经过专门设计，采用同步或常规的开关PWM控制器提高DC/DC转换器的整体效率。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。结果是MOSFET易于驱动，并且驱动安全性更高（即使在非常高的频率），而且DC/DC电源设计具有更高的整体效率。

FDMC8030

DualN-ChannelPowerTrench짰MOSFET40V,12A,10m廓

FDP8030L

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •80A,30V.RDS(ON)=0.0035Ω@VGS=10VRDS(ON)=0.0045Ω@VGS=4.5V

FDP8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco