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FDB6670AL中文资料N-Channel Logic Level PowerTrench® MOSFET数据手册ONSEMI规格书

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厂商型号

FDB6670AL

功能描述

N-Channel Logic Level PowerTrench® MOSFET

制造商

ONSEMI ON Semiconductor

中文名称

安森美半导体

数据手册

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更新时间

2025-9-21 10:50:00

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FDB6670AL规格书详情

描述 Description

General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

特性 Features

• 80 A, 30 V
   RDS(ON) = 6.5 mW @ VGS = 10 V
   RDS(ON) = 8.5 mW @ VGS = 4.5 V
• Critical DC electrical parameters specified at
   elevated temperature
• High performance trench technology for extremely
   low RDS(ON)
• 175°C maximum junction temperature rating

技术参数

  • 型号:

    FDB6670AL

  • 功能描述:

    MOSFET N-Channel PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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