300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：359.99 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.04 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，UniFETTM，300 V，14 A，290 mΩ，D2PAK

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 290mΩ （最大值）@ VGS = 10V, ID = 7A\n•低栅极电荷（典型值 18nC） \n•低 Crss（典型值 17pF） \n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：359.99 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司