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FDB14N30TM

300V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDB14N30

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDB14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDP14N30

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDPF14N30

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDPF14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDPF14N30T

N-ChannelUniFETMOSFET300V,14A,290m

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQA14N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQAF14N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQAF14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQB14N30

300VN-ChannelMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB14N30TM

300VN-CHANNELMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQI14N30

300VN-ChannelMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQP14N30

300VN-ChannelMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQP14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQPF14N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.5A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQPF14N30

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

KSM14N30

300VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

详细参数

  • 型号:

    FDB14N30TM

  • 功能描述:

    MOSFET 300V N-Ch MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2019+全新原装正品
TO263
8950
BOM配单专家,发货快,价格低
询价
ON
23+
/
4800
只做原装现货工厂免费出样欢迎咨询订单
询价
onsemi
23+
D2PAK(TO-263)
30000
晶体管-分立半导体产品-原装正品
询价
FAIRCHILD
SOT-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
Fairchild(飞兆/仙童)
2023+
N/A
4550
全新原装正品
询价
onsemi(安森美)
23+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
询价
Fairchild
07+/08+
TO-263
7500
询价
FAIRCHLD
2017+
TO-263
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRCHILD
22+23+
TO263
7005
绝对原装正品全新进口深圳现货
询价
FAI
1845+
TO263
5790
只做原装!量大可以订货!特价支持实单!
询价
更多FDB14N30TM供应商 更新时间2024-4-26 11:04:00