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FDB14N30TM中文资料仙童半导体数据手册PDF规格书
FDB14N30TM规格书详情
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features
• 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
产品属性
- 型号:
FDB14N30TM
- 功能描述:
MOSFET 300V N-Ch MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-263 |
505348 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
FAIRCHLD |
23+ |
TO-263 |
28000 |
原装正品 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ON(安森美) |
24+ |
D2PAK |
9217 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
FAIRCHILD |
25+23+ |
TO263 |
7005 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
Fairchild |
24+ |
TO-263 |
7500 |
询价 | |||
onsemi(安森美) |
24+ |
D2PAK |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
54000 |
郑重承诺只做原装进口现货 |
询价 |