4 x 50 W class-D digital input power amplifier with I2C diagnostics, digital impedance meter (DIM) and low voltage operation

Features • Integrated 110 dB D/A conversion • I2S and TDM digital input (3.3/1.8 V) • Input sampling frequency: 44.1 kHz, 48 kHz, 96 kHz, 192 kHz • Class-D channels with 93 efficiency • EMI control for AM compatibility • EMI compliance evaluated following normative IEC61967-4 and IEC62132-

文件：249 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

4 x 50 W class-D digital input power amplifier with I2C diagnostics, digital impedance meter (DIM) and low voltage operation

Features • Integrated 110 dB D/A conversion • I2S and TDM digital input (3.3/1.8 V) • Input sampling frequency: 44.1 kHz, 48 kHz, 96 kHz, 192 kHz • Class-D channels with 93 efficiency • EMI control for AM compatibility • EMI compliance evaluated following normative IEC61967-4 and IEC62132-

文件：249 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

4 x 50 W class-D digital input power amplifier with I2C diagnostics, digital impedance meter (DIM) and low voltage operation

Features • Integrated 110 dB D/A conversion • I2S and TDM digital input (3.3/1.8 V) • Input sampling frequency: 44.1 kHz, 48 kHz, 96 kHz, 192 kHz • Class-D channels with 93 efficiency • EMI control for AM compatibility • EMI compliance evaluated following normative IEC61967-4 and IEC62132-

文件：249 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件：194.68 Kbytes 页数：4 Pages

MOSPEC

统懋

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

文件：76.04 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

文件：76.04 Kbytes 页数：12 Pages

NEC

瑞萨