1x10 W digital input class-D automotive audio amplifier with advanced diagnostics, wide voltage operating range for telematics and e-Call application

Features • AEC-Q100 qualified • Integrated 100 dB D/A conversion • I2S and TDM digital input (up to 16CH TDM) • Selectable input sample rate frequency (8/16/32/44.1/48/96) • Wide supply operating range: 3.3 V - 18 V • PWM frequency switching selectable by I2C – 352.8 kHz, 384kHz, 411.6 kHz,

文件：672.34 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

1x10 W digital input class-D automotive audio amplifier with advanced diagnostics, wide voltage operating range for telematics and e-Call application

Features • AEC-Q100 qualified • Integrated 100 dB D/A conversion • I2S and TDM digital input (up to 16CH TDM) • Selectable input sample rate frequency (8/16/32/44.1/48/96) • Wide supply operating range: 3.3 V - 18 V • PWM frequency switching selectable by I2C – 352.8 kHz, 384kHz, 411.6 kHz,

文件：672.34 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

1 x 10 W class D digital input automotive power amplifier with diagnostics, wide voltage operation range for car audio and telematics

The FDA803S is the new ST single channel class-D audio amplifier, specifically designed for automotive applications. The FDA803S integrates a 24-bit, 100 dB DAC conversion and PWM class-D output stage with feedback before LC filter. This configuration enables the design of a compact and inexpensive • AEC-Q100 qualified \n• Integrated 100 dB D/A conversion \n• I2S and TDM digital input (up to 16CH TDM) \n• Selectable input sample rate frequency (8/16/32/44.1/48/96 kHz) \n• Wide supply operating range: 3.3 V - 18 V \n• PWM frequency switching selectable by I2C \n •352.8 kHz, 384kHz, 411.6 kHz, 4;

ST

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2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

文件：79.67 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件：194.68 Kbytes 页数：4 Pages

MOSPEC

统懋

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

文件：60.48 Kbytes 页数：8 Pages

NEC

瑞萨