isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-Channel PowerTrench짰 MOSFET

文件：340.31 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET

文件：858.28 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，逻辑电平，40 V，10 A，2.1 mΩ

N-Channel Logic Level PowerTrench® MOSFET 40 V, 10 A, 2.1 mΩ\nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 1.46mΩ （典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 345nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr 体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•保证160A电流持续2秒\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

文件：858.28 Kbytes 页数：8 Pages

Fairchild

仙童半导体