400V NPN High Voltage Transistor in SOT89

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. •BVCEO > 400V\n•IC = 225mA Continuous Collector Current\n•ICM = 500mA Peak Pulse Current\n•Excellent hFE Characteristics up to 100mA\n•Low saturation voltage VCE(sat) < 200mV @ 20mA\n•Complementary PNP Type: FCX558Q\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen- and Antimony-Free. “Green” De;

Diodes

美台半导体

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PWR HI VOLTAGE TRANSISTOR SOT89

DIODES

美台半导体

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes 页数：7 Pages

DIODES

美台半导体

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

文件：25.12 Kbytes 页数：2 Pages

DIODES

美台半导体

High Conductance Low Leakage Diode

文件：38.98 Kbytes 页数：2 Pages

NSC

国半