FCX458Q中文资料400V NPN High Voltage Transistor in SOT89数据手册Diodes规格书

描述 Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

特性 Features

•BVCEO > 400V
•IC = 225mA Continuous Collector Current
•ICM = 500mA Peak Pulse Current
•Excellent hFE Characteristics up to 100mA
•Low saturation voltage VCE(sat) < 200mV @ 20mA
•Complementary PNP Type: FCX558Q
•Totally Lead-Free & Fully RoHS Compliant 
•Halogen- and Antimony-Free. “Green” Device 
•The FCX458Q is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF16949certified facilities.https://www.diodes.com/quality/product-definitions/

简介

FCX458Q属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的FCX458Q晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。