N-Channel MOSFET 600V, 10.8A, 0.299廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs,employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：293.26 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，299 mΩ，TO-220F

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •RDS(on) = 255mΩ （典型值）@ VGS = 10V, ID = 5.4A\n•超低栅极电荷（典型值Qg = 27.4nC )\n•低有效输出电容（典型值Coss.eff = 130pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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Fairchild

仙童半导体

General Description

General Description SuperFET™ is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction los

文件：574.49 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体