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FCPF11N60NT

功率 MOSFET,N 沟道,SUPREMOS®,FAST,600 V,10.8 A,299 mΩ,TO-220F; •RDS(on) = 255mΩ (典型值)@ VGS = 10V, ID = 5.4A\n•超低栅极电荷(典型值Qg = 27.4nC )\n•低有效输出电容(典型值Coss.eff = 130pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n;

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结(SJ)技术,该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance(导通电阻规格),卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用,如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FCPF11N60NT

N-Channel MOSFET 600V, 10.8A, 0.299廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60NT

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF11N60T

GeneralDescription

GeneralDescription SuperFET™is,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowonresistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionlos

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60T

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60T

N-ChannelSuperFET®MOSFET

GeneralDescription SuperFET®MOSFETisFairchildSemiconductor’sfirstgenera-tionofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconduction

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FMC11N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMC11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMI11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMP11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    600

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    4

  • ID Max (A):

    10.8

  • PD Max (W):

    94

  • RDS(on) Max @ VGS = 10 V(mΩ):

    299

  • Qg Typ @ VGS = 10 V (nC):

    27.4

  • Ciss Typ (pF):

    1130

  • Package Type:

    TO-220-3 FullPak

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO220F
50
只做原厂渠道 可追溯货源
询价
仙童
24+
NA
6800
询价
onsemi(安森美)
24+
TO-220F
8498
支持大陆交货,美金交易。原装现货库存。
询价
仙童
17+
NA
6200
100%原装正品现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
英飞凌
2020+
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FSC
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
询价
FAIRCHI
1844+
TO220
6528
只做原装正品假一赔十为客户做到零风险!!
询价
FAIRCHI
21+
TO-220F
12588
原装正品,自己库存 假一罚十
询价
三年内
1983
只做原装正品
询价
更多FCPF11N60NT供应商 更新时间2025-7-29 16:36:00