MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 75 A, 29 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：283.11 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCH029N65S3；Package：TO-247G03；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 75 A, 29 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：283.11 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 29 mΩ, TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s •700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 201 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 1615 pF)\n• Lower switching loss\n• Typ. RDS(on) = 23.7 mΩ\n•100% Avalanche Tested\n•RoHS Compl;

ONSEMI

安森美半导体

N/O

ON

上传：广州特千贸易有限公司

N/O

ON

上传：广州特千贸易有限公司