丝印：FCB260N65S3；Package：D2-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，D2PAK

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superio • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)\n• Lower switching loss\n• Ultra Low Gate Charge (Typ. Qg= 24 nC)\n• Lower switching loss\n• Internal Gate resistance: 8.7ohm\n• Lower peak Vds and lower Vgs;

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：416.68 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：309.72 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

文件：303.51 Kbytes 页数：2 Pages

ISC

无锡固电