FCB260N65S3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCB260N65S3

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

FCD260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive

FCD260N65S3

iscN-ChannelMOSFETTransistor

FCP260N65S3

iscN-ChannelMOSFETTransistor

NVB260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,Automotive,Easy-drive

NVD260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,260m,12A

Features •UltraLowGateCharge&LowEffectiveOutputCapacitance •LowerFOM(RDS(on)max.xQgtyp.&RDS(on)max.xEOSS) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant